Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.36.1058/fulltext
Reference21 articles.
1. Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAs
2. Surface state band on GaAs (110) face
3. Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)
4. Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors
5. Evidence for a Surface-State Exciton on GaAs(110)
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