Scanning tunneling microscopy and spectroscopy of cleaved and annealed Ge(111) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Structural Properties of Cleaved Silicon and Germanium Surfaces
2. Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries
3. Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy
4. Formation of the 5×5 reconstruction on cleaved Si(111) surfaces studied by scanning tunneling microscopy
5. Kinetics of the Si(111)2 × 1→ 5 × 5 and 7 × 7 transformation studied by scanning tunneling microscopy
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1. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism;Advances in Semiconductor Nanostructures;2017
2. Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study;Applied Surface Science;2017-01
3. Topographic and electronic structure of cleaved SrTiO3(001) surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-05
4. Electronic and atomic structure of Co/Ge nanoislands on the Ge(111) surface;Physical Review B;2013-11-27
5. Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2 × 1 surfaces;Nanotechnology;2012-10-11
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