High-resolution electron microscopy study of αFeSi2 heteroepitaxy on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Silicide epilayers: recent developments and prospects for a Si-compatible technology
2. Synthesis and properties of epitaxial semiconducting silicides
3. Epitaxial Growth of α-FeSi 2 on Si(111) at Low Temperature
4. Epitaxial growth of Fe-Si compounds on the silicon (111) face
5. EMS - a software package for electron diffraction analysis and HREM image simulation in materials science
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1. Lattice dynamics of β−FeSi2 nanorods;Physical Review B;2022-11-17
2. Lattice dynamics of endotaxial silicide nanowires;Physical Review B;2020-11-10
3. Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases;Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2020-05-22
4. Lattice dynamics and polarization-dependent phonon damping in α -phase FeSi2 nanostructures;Physical Review B;2020-04-06
5. Step-edge guided growth of nanowires on three-fold symmetric vicinal Si(111) surfaces;Bulletin of Materials Science;2020-02-26
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