Epitaxial Growth of α-FeSi 2 on Si(111) at Low Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1209/0295-5075/22/6/009/pdf
Cited by 58 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. α-FeSi2 as a Buffer Layer for β-FeSi2 Growth: Analysis of Orientation Relationships in Silicide/Silicon, Silicide/Silicide Heterointerfaces;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-07
2. Lattice dynamics and polarization-dependent phonon damping in α -phase FeSi2 nanostructures;Physical Review B;2020-04-06
3. Tomographic layer-by-layer analysis of epitaxial iron-silicide nanostructures by DFT-assisted STS;Applied Surface Science;2019-12
4. Fabrication of α-FeSi2 nanowhiskers and nanoblades via electron beam physical vapor deposition;Materials & Design;2019-11
5. Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001);Semiconductors;2018-04-17
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