Synthesis and properties of epitaxial semiconducting silicides-Reference-Cited by-同舟云学术

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Synthesis and properties of epitaxial semiconducting silicides

Published:1993-11 Issue: Volume:73 Page:90-101
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Derrien J.,Chevrier J.,Thanh Vinh Le,Berbezier I.,Giannini C.,Lagomarsino S.,Grimaldi M.G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference32 articles.

1. Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devices

2. Heteroepitaxy of metallic and semiconducting silicides on silicon

3. Structure and electronic properties of epitaxially grown silicides

4. Semiconducting silicide-silicon heterostructures: growth, properties and applications

5. Epitaxy of metal silicides

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