Leed, aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference14 articles.
1. Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction
2. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face
3. Surface studies on clean and oxygen-exposed GaAs and Ge surfaces by low-energy electron loss spectroscopy
4. LEED-Auger characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and O
5. Different bonding states of Cs and O on highly photoemissive GaAs by flash−desorption experiments
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4. Cs-induced charge transfer on(2×4)-GaAs(001) studied by photoemission;Physical Review B;2010-01-06
5. The work function of submonolayer cesium-covered gold: A photoelectron spectroscopy study;The Journal of Chemical Physics;2008-07-14
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