On the application of Rutherford scattering and channelling techniques to study semiconductor surfaces-Reference-Cited by-同舟云学术

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On the application of Rutherford scattering and channelling techniques to study semiconductor surfaces

Published:1972-08 Issue:2 Volume:32 Page:278-286
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Morgan D.V.,Bøgh E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference11 articles.

1. Ion Implantation in Semiconductors;Mayer,1970

2. Ion Scattering Methods;Rubin,1959

3. Alloying Behavior of Au and Au–Ge on GaAs

4. Investigation of Te‐Doped GaAs Annealing Effects by Optical‐ and Channeling‐Effect Measurements

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Channeling;Ion Beans for Materials Analysis;1989

2. Fluorine depth analysis using Rutherford backscattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-04

3. Rutherford scattering-channeling analysis of semiconductor interfaces;Thin Solid Films;1983-06

4. BIBLIOGRAPHY;Materials Analysis by Ion Channeling;1982

5. Rutherford Scattering-Channeling Analysis of Semiconductor Interfaces;MRS Proceedings;1982

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