Alloying Behavior of Au and Au–Ge on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1660773
Reference8 articles.
1. Metal-semiconductor contacts for GaAs bulk effect devices
2. Ohmic contacts for GaAs devices
3. Ohmic Contacts to Solution‐Grown Gallium Arsenide
4. ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
5. Analysis of amorphous layers on silicon by backscattering and channeling effect measurements
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