ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653174
Reference5 articles.
1. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
2. Defect studies in crystals by means of channeling
3. THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING
4. Chemical analysis of surfaces using alpha particles
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