The role of surface steps in the asymmetric surface dislocation nucleation in vicinal heterostructures with compressive and tensile stresses
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Dislocations in strained-layer epitaxy: theory, experiment, and applications
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3. Critical thickness during two-dimensional and three-dimensional epitaxial growth in semiconductor heterostructures
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2. Dislocation nucleation and segregation under adhesive contact of a nano-asperity coating on a crystalline solid;European Journal of Mechanics - A/Solids;2021-08
3. Corroboration of a multiscale approach with all atom calculations in analysis of dislocation nucleation from surface steps;Philosophical Magazine;2006-11-11
4. Step-Controlled Strain Relaxation in the Vicinal Surface Epitaxy of Nitrides;Physical Review Letters;2005-08-17
5. Crystallographic tilting in lattice-mismatched heteroepitaxy: A Dodson–Tsao relaxation approach;Journal of Applied Physics;1996
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