Corroboration of a multiscale approach with all atom calculations in analysis of dislocation nucleation from surface steps
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430600796577
Reference51 articles.
1. Nature of misfit dislocation sources in strained‐layer semiconductor structures
2. The role of surface steps in the asymmetric surface dislocation nucleation in vicinal heterostructures with compressive and tensile stresses
3. Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures
4. Atomistic models of dislocation formation at crystal surface ledges in Si1-xGex/Si(100) heteroepitaxial thin films
5. The Film Surface as the Site for Spontaneous Nucleation of Dislocation Half-Loops in Strained Heteroepitaxial Systems
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