Modification of crystalline semiconductor surfaces by low-energy Ar+ bombardment: Si(111) and Ge(100)-Reference-Cited by-同舟云学术

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Modification of crystalline semiconductor surfaces by low-energy Ar+ bombardment: Si(111) and Ge(100)

Published:1993-02 Issue:3 Volume:282 Page:333-341
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Bock W.,Gnaser H.,Oechsner H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference29 articles.

1. Ion Implantation and Beam Processing,1984

2. Hydrogen adsorption and surface structures of silicon

3. The electronic structure of semiconductor surfaces

4. Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon

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