Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference22 articles.
1. Theory of reconstruction induced subsurface strain — application to Si(100)
2. Atomic and Electronic Structures of Reconstructed Si(100) Surfaces
3. Theoretical determination of surface atomic geometry: Si(001)-(2×1)
4. Evidence of multilayer distortions in the reconstructed Si(001) surface
5. Ion beam crystallography of silicon surfaces
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3. Surface phonons of Ge(001) and their correlation with thep(2×1) andc(4×2) reconstruction as shown by Raman spectroscopy;Physical Review B;2012-07-16
4. Adsorption and Thermal Reactions of H2O and H2S on Ge(100);The Journal of Physical Chemistry C;2009-12-28
5. Adsorption and Thermal Reaction of Short-Chain Iodoalkanes on Ge(100);The Journal of Physical Chemistry C;2009-09-11
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