Step structure and surface reconstruction on vicinal Ge(111) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference22 articles.
1. Temperature dependence of vicinal Si(111) surfaces
2. Leed studies of vicinal surfaces of silicon
3. Phase transitions on clean and nickel containing vicinal Si(111) surfaces
4. Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy
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1. Tailoring the electronic structure of thin Bi films via the growth on vicinal Ge(111);Spintronics XVI;2023-09-28
2. Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction;Journal of Vacuum Science & Technology B;2022-09
3. New Features of the Ge(111) Surface with Co-existing с(2x8) and 2x2 Reconstructions Investigated by Scanning Tunneling Microscopy;Ukrainian Journal of Physics;2015-11
4. Atomically flat planarization of Ge(100), (110), and (111) surfaces in H2annealing;Applied Physics Express;2014-04-09
5. The structural and electronic properties of platinum–germanide on Ge(111);Surface Science;2011-03
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