Surface composition of (100)InP substrates bombarded by low energy Ar+ ions, studied by AES and EPES
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Elastic peak electron spectroscopy for auger electron spectroscopy and electron energy loss spectroscopy
2. Ellipsometric study of surface treatments carried out on {100} InP inside A VPE reactor
3. Effect of ion bombardment at low energy on (100)InP surfaces, studied by Auger electron spectroscopy
4. Surface characterisation of indium phosphide
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1. Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III–V semiconductors;Applied Surface Science;2015-02
2. Electrical Characterization and Electronic Transport Modelization in the InN/InP Structures;Sensor Letters;2009-10-01
3. SEM and XPS studies of nanohole arrays on InP(100) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering;Surface Science;2009-10
4. Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound;Applied Surface Science;2009-10
5. Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence;Journal of Crystal Growth;2009-04
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