Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound-Reference-Cited by-同舟云学术

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Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Published:2009-10 Issue:1 Volume:256 Page:21-26
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Berrouachedi N.,Bouslama M.,Abdellaoui A.,Ghaffour M.,Jardin C.,Hamaida K.,Monteil Y.,Lounis Z.,Ouerdane A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. An AES and ELS study of InP (100) surface subjected to argon ion bombardment

2. Correlation of the fine structure of InM4.5N4.5N4.5Auger spectrum and thermal degradation at InP surfaces

3. Evidence for interfacial defects in metal‐insulator‐InP structures induced by the insulator deposition

4. On the chemistry of passivated oxide–InP interfaces

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Point defects behavior analysis in thin films and massif SnO2 by AES spectroscopy and photoluminescence;Journal of Materials Science: Materials in Electronics;2020-05-15

2. Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal;Chinese Journal of Chemical Physics;2014-02-27

3. The Effect of Nitrogen Ion Implantation on the Surface Properties of Ti6Al4V Alloy Coated by a Carbon Nanolayer;Journal of Nanomaterials;2013

4. GROWTH OF In2O3 ON In METAL AND ON InSb BY THE ELECTRON IRRADIATION;Surface Review and Letters;2012-11-27

5. AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces;IOP Conference Series: Materials Science and Engineering;2012-02-07

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