Adsorption and dissociation of Si2H6 on Ge(001)2 × 1-Reference-Cited by-同舟云学术

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Adsorption and dissociation of Si2H6 on Ge(001)2 × 1

Published:1993-01 Issue:3 Volume:280 Page:265-276
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Tsu R.,Lubben D.,Bramblett T.R.,Greene J.E.,Lin D.-S.,Chiang T.-C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference42 articles.

1. Gas source silicon molecular beam epitaxy using disilane

2. Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy

3. Thermal and photostimulated reactions on Si2H6-adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic-layer epitaxy

4. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Surface Passivation Technology for Germanium-Tin P-Channel MOSFETs: Suppression of Germanium and Tin Segregation for Mobility Enhancement;ECS Journal of Solid State Science and Technology;2014

2. New Si atomic-layer-controlled growth technique with thermally cracked hydride molecule;Journal of Crystal Growth;2002-04

3. A surface kinetics model for the growth of Si1−xGex by UHV/CVD using SiH4/GeH4;Journal of Crystal Growth;2000-09

4. Adsorption studies of digermane and disilane on Ge(100);Surface and Interface Analysis;2000-03

5. Empirical-potential study of the dissociative chemisorption ofSi2H6on theSi(001)2×1surface;Physical Review B;1999-09-15

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