Evidence for sequential tunnelling and charge build-up in double barrier resonant tunnelling devices-Reference-Cited by-同舟云学术

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Evidence for sequential tunnelling and charge build-up in double barrier resonant tunnelling devices

Published:1988-01 Issue:1-3 Volume:196 Page:404-409
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Payling C.A.,Alves E.S.,Eaves L.,Foster T.J.,Henini M.,Hughes O.H.,Simmonds P.E.,Sheard F.W.,Toombs G.A.,Portal J.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference15 articles.

1. Quantum well oscillators

2. Stable and unstable current‐voltage measurements of a resonant tunneling heterostructure oscillator

3. Observation of intrinsic bistability in resonant tunneling structures

4. Comment on ‘‘Observation of intrinsic bistability in resonant-tunneling structures’’

5. Observation by resonant tunneling of high-energy states in GaAs-Ga1−xAlxAs quantum wells

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1. Resistance switching memory operation using the bistability in current–voltage characteristics of GaN/AlN resonant tunneling diodes;Japanese Journal of Applied Physics;2016-08-31

2. Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory;Japanese Journal of Applied Physics;2015-02-18

3. Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well;IEEE Transactions on Electron Devices;2014-05

4. An (AlGa)As/GaAs heterojunction bipolar transistor with a resonant-tunnelling collector;Semiconductor Science and Technology;1994-08-01

5. Elastic and inelastic tunneling in a strained-layer double-barrier resonant-tunneling structure;Physical Review B;1993-08-15

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