Landau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference8 articles.
1. Effective mass and collision time of (100) Si surface electrons
2. Parabolic Magnetoresistance from the Interaction Effect in a Two-Dimensional Electron Gas
3. Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction
4. Single-particle relaxation time versus scattering time in an impure electron gas
5. High mobility hole gas and valence‐band offset in modulation‐dopedp‐AlGaAs/GaAs heterojunctions
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