Molecular dynamics investigation of the MBE growth of Si on Si{110}
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference30 articles.
1. Formation of superstructures in Ge-deposited surfaces of Si(110) by annealing
2. Confined optical modes in short period (110) Si/Ge superlattices
3. Initial Growth Mechanism of GaAs on Si(110)
4. Single‐crystal growth of CoSi2 (110) on Si (110)
5. Calculation of phonons in [001] and [110] SiGe strained-layer superlattices
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3. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films;Advances in Chemical Engineering Volume 28;2001
4. Homoepitaxial growth mechanism of ZnO(0001): Molecular-dynamics simulations;Physical Review B;2000-06-15
5. Empirical Molecular Dynamics Modeling of Silicon and Silicon Dioxide: A Review;Critical Reviews in Solid State and Materials Sciences;1999-12
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