Single‐crystal growth of CoSi2 (110) on Si (110)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102110
Reference17 articles.
1. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
2. Control of a natural permeable CoSi2base transistor
3. Hot Electron Transistors Using Si/CoSi2
4. Si / CoSi2 / Si Structures: Pseudomorphism, Interface Structures, Epitaxial Orientations, and the Control of Pinholes
5. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
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1. Interfaces;Materials Science and Technology;2013-02-15
2. Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si;Thin Solid Films;2008-04
3. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11
4. Transition metal silicides in silicon technology;Reports on Progress in Physics;1993-11-01
5. Molecular dynamics investigation of the MBE growth of Si on Si{110};Surface Science;1993-03
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