Calculation of phonons in [001] and [110] SiGe strained-layer superlattices-Reference-Cited by-同舟云学术

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Calculation of phonons in [001] and [110] SiGe strained-layer superlattices

Published:1989-06 Issue:11 Volume:70 Page:1025-1029
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Ghanbari R.A.,Fasol G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference16 articles.

1. Phonons in semiconductor superlattices

2. Physics and applications of GexSi1-x/Si strained-layer heterostructures

3. Two-Dimensional Systems: Physics & New Devices;Abstreiter,1986

4. The use of valence force potentials in calculating crystal vibrations

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2. Thermal conductivity of silicene nanosheets and the effect of isotopic doping;Journal of Physics D: Applied Physics;2014-04-03

3. Modeling of silicon thermal expansion using strained phonon spectra;Journal of Micromechanics and Microengineering;2012-07-04

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