Structure of indium-adsorbed Si(110) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference14 articles.
1. Surface morphology of GaAs(110) by scanning tunneling microscopy
2. Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructions
3. Atomic configuration of hydrogenated and clean Si(110) surfaces
4. Arsenic termination of the Si(110) surface
5. Ordered surface phases in Sb/Si(110) systems
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1. Indium-induced superstructures formed on Si(110) surfaces;Applied Surface Science;2009-11
2. Scanning tunneling microscopy on Sn/Si(110) system;Applied Surface Science;1998-06
3. The structural properties of Si(110)1 × 1-Bi surfaces;Surface Science;1995-11
4. Surface electronic states in the fundamental gap of the clean and group III–V doped Si(110) surface;Surface Science;1995-07
5. References, metals on semiconductors;Adsorbed Layers on Surfaces. Part 1: Adsorption on Surfaces and Surface Diffusion of Adsorbates
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