Surface electronic states in the fundamental gap of the clean and group III–V doped Si(110) surface-Reference-Cited by-同舟云学术

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Surface electronic states in the fundamental gap of the clean and group III–V doped Si(110) surface

Published:1995-07 Issue: Volume:331-333 Page:1262-1266
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Nesterenko B.,Stadnik O.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference23 articles.

1. Formation of surface superstructures by heat treatments on Ni-contaminated surface of Si(110)

2. Clean and metal-contaminated Si(110) surfaces studied by RHEED, XPS and STM

3. Surface Reconstruction on a Clean Si(110) Surface Observed by RHEED

4. Scanning Tunneling Microscopy Study of the 16-Structure Appearing on a Si(110) Surface

5. Clean and Ni-adsorbed Si(110) surfaces

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination properties of clean “16 × 2” andPb- orAl-covered (110) silicon surfaces;Il Nuovo Cimento D;1998-07

2. References, metals on semiconductors;Adsorbed Layers on Surfaces. Part 1: Adsorption on Surfaces and Surface Diffusion of Adsorbates

3. Mg, Ni, Pb on Si;Adsorbed Layers on Surfaces. Part 1: Adsorption on Surfaces and Surface Diffusion of Adsorbates

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