Arsenic termination of the Si(110) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.9589/fulltext
Reference21 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
2. Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As
3. Geometric and Local Electronic Structure of Si(111)-As
4. Symmetric arsenic dimers on the Si(100) surface
5. Low‐Energy Electron Diffraction Study of Silicon Surface Structures
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