Low energy electron-beam-enhanced formation of ultrathin insulating silicon oxynitride layers on Si(100) at moderate temperatures: in situ determination of the band gap energy using electron energy loss spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference46 articles.
1. Silicon oxynitride films prepared by plasma nitridation of silicon and their application for tunnel metal‐insulator‐silicon diodes
2. Kinetics of Si(100) nitridation first stages by ammonia: Electron- beam-induced thin film growth at room temperature
3. Unmonochromatized synchrotron radiation promoted silicon oxynitridation at room temperature
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