Silicon oxynitride films prepared by plasma nitridation of silicon and their application for tunnel metal‐insulator‐silicon diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334181
Reference20 articles.
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3. Highly Reliable MIS Capacitors With Plasma Nitridation and Doubled Dielectric-Constant Tantalum Pentoxide;IEEE Transactions on Electron Devices;2005-08
4. Electron beam-assisted formation of silicon oxynitride layers (3.5 nm) on silicon at moderate temperatures using NO gas: growth kinetics and mechanisms;Journal of Non-Crystalline Solids;1999-04
5. Chapter 1 Silica, silicon nitride and oxynitride thin films;New Insulators, Devices and Radiation Effects;1999
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