Synthesis and characterization of N-rich single crystalline SiOxNy nanowires with three-dimensional branches
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3151954
Reference20 articles.
1. Scaling the gate dielectric: Materials, integration, and reliability
2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
3. Silicon Oxynitride Layers for Optical Waveguide Applications
4. Silicon Oxynitride
5. The formation of SiGaN/SiOxNy nanocables and SiOxNy-based nanostructures using GaN as a resource of Ga
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1. Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing;ACS Applied Materials & Interfaces;2021-02-02
2. Stress-Driven and Carbon-Assisted Growth of $ \hbox{SiO}_{x}\hbox{N}_{y}$ Nanowires on Photoresist-Derived Carbon Microelectrode;Journal of Microelectromechanical Systems;2012-12
3. Nanoporous tree-like SiO2 films fabricated by sol–gel assisted electrostatic spray deposition;Microporous and Mesoporous Materials;2012-03
4. Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires;Journal of Nanomaterials;2012
5. Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires;Nanoscale Research Letters;2011-07-25
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