Room temperature annealing of SnS2 films with electron impulse force-Reference-Cited by-同舟云学术

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Room temperature annealing of SnS2 films with electron impulse force

Published:2023-02 Issue: Volume:224 Page:115107
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Al-Mamun Nahid Sultan^ORCID,Wolfe Douglas E.,Haque Aman,Yim Jae-Gyun,Kim Seong Keun

Funder

Defense Threat Reduction Agency

National Science Foundation

National Science Foundation Directorate for Engineering

Division of Electrical, Communications and Cyber Systems

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference34 articles.

1. Tin disulfide—an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics;Huang;ACS Nano,2014

2. Large-scale growth and field-effect transistors electrical engineering of atomic-layer SnS2;Xu;Small,2019

3. Preparing a composite including SnS2, carbon nanotubes and S and using as cathode material of lithium-sulfur battery;Jun;Scr. Mater.,2020

4. Three-dimensional 1T-SnS2 wrapped with graphene for sodium-ion battery anodes with highly reversible sodiation/desodiation;Li;Scr. Mater.,2022

5. Wafer-scale, conformal, and low-temperature synthesis of layered tin disulfides for emerging nonplanar and flexible electronics;Pyeon;ACS Appl. Mater. Interfaces,2020

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Forward bias annealing of proton radiation damage in NiO/Ga₂O₃ rectifiers;Physica Scripta;2024-06-20

2. Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2024-01-01

3. Improving vertical GaN p–n diode performance with room temperature defect mitigation;Semiconductor Science and Technology;2023-12-07

4. Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature;physica status solidi (a);2023-09-07

5. Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation;Applied Physics Letters;2023-05-15

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