Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics-Reference-Cited by-同舟云学术

Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

Published:2014-09-29 Issue:10 Volume:8 Page:10743-10755
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Huang Yuan¹,Sutter Eli¹,Sadowski Jerzy T.¹,Cotlet Mircea¹,Monti Oliver L.A.²,Racke David A.²,Neupane Mahesh R.³,Wickramaratne Darshana³,Lake Roger K.³,Parkinson Bruce A.⁴,Sutter Peter¹

Affiliation:

1. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States

2. Department of Chemistry and Biochemistry, The University of Arizona, Tucson, Arizona 85721, United States

3. Laboratory for Terahertz and Terascale Electronics, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States

4. School of Energy Resources and Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071, United States

Funder

Division of Chemistry

National Science Foundation

Function Accelerated nanoMaterial Engineering, University of California, Los Angeles

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn504481r

Reference73 articles.