The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4841415
Reference32 articles.
1. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
2. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
3. Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes
4. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
5. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
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