Effect of annealing on the band bending and the overlayer morphology at Sb/III–V (110) interfaces-Reference-Cited by-同舟云学术

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Effect of annealing on the band bending and the overlayer morphology at Sb/III–V (110) interfaces

Published:1992-01 Issue: Volume:56-58 Page:169-177
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Esser N.,Zahn D.R.T.,Müller C.,Richter W.,Stephens C.,Whittle R.,McGovern I.T.,Kulkarni S.,Braun W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. The role of order on the interface properties of Sb/GaAs(110)

2. Photoemission investigation of Sb/GaAs(110) interfaces

3. Fermi‐level pinning at the interfaces of Sb, Sn, and Ge on GaAs(110) surfaces

4. Unique band bending at the Sb/InP(110) interface

5. Abrupt interfaces on InP(110): Cases of Sb and Sn

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1. Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution;physica status solidi (b);2018-09-26

2. Surface core-level shifts ofGaAs(100)(2×4)from first principles;Physical Review B;2007-09-26

3. VUV-ellipsometry on GaN: Probing conduction band properties by core level excitations;physica status solidi (b);2005-11

4. PASSIVATION INVESTIGATIONS OF GaAs (100) SURFACE;Physics and Technology of Thin Films;2004-06

5. Dynamical properties of Sb- and Bi-covered (110) surfaces of III-V compounds;Journal of Physics: Condensed Matter;2002-06-08

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