Photoemission investigation of Sb/GaAs(110) interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
1. Column III and V elements on GaAs (110): Bonding and adatom‐adatom interaction
2. Models of column III and V elements on GaAs (110): Application to MBE
3. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
4. Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds
5. LEED-AES-TDS characterization of Sb overlayers on GaAs(110)
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1. References;Low Molecular Weight Organic Semiconductors;2010-10-04
2. Schottky contacts on passivated GaAs(100) surfaces: barrier height and reactivity;Applied Surface Science;2004-07
3. Influence of sulfur on the Sb–GaAs(001) interface;Surface Science;1999-08
4. Adsorption of group-V elements on III–V (1 1 0) surfaces;Surface Science Reports;1996-11
5. Structural and electronic properties of Sb islands on GaAs (110);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
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