Growth and characterization of silicon-nitride films by plasma-enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

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Growth and characterization of silicon-nitride films by plasma-enhanced chemical vapor deposition

Published:1991-01 Issue: Volume:48-49 Page:104-110
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Han I.K.,Lee Y.J.,Jo J.W.,Lee J.I.,Kang K.N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference22 articles.

1. Chemical vapour deposition promoted by r.f. discharge

2. The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge Reaction

3. Insulation degradation and anomalous etching phenomena in silicon nitride films prepared by plasma-enhanced deposition

4. R.F. plasma deposition of silicon nitride layers

5. High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy

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2. Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD;Modern Electronic Materials;2020-07-15

3. Ellipsometric characterization of inhomogeneous non-stoichiometric silicon nitride films;Surface and Interface Analysis;2013-02-21

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5. Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition;Small;2008-12

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