Novel method of strain-relaxed Si1−xGex growth on Si(100) by MBE-Reference-Cited by-同舟云学术

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Novel method of strain-relaxed Si1−xGex growth on Si(100) by MBE

Published:1996-07 Issue: Volume:100-101 Page:487-490
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Iwano H.,Yoshikawa K.,Kojima A.,Hayashi K.,Zaima S.,Yasuda Y.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

2. Electrical characterization of SiGe heterostructure bipolar transistors

3. Growth and Processing of Relaxed-Si1-xGex/Strained-Si Structures for Metal-Oxide Semiconductor Applications

4. Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications

5. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer;Applied Surface Science;2004-03

2. Theory of metastable group-IV alloys formed from CVD precursors;Physical Review B;2001-11-08

3. Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy;Applied Surface Science;1998-06

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