Ion-beam mixed MoSi2 layers: The dependence of composition on mixing temperature-Reference-Cited by-同舟云学术

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Ion-beam mixed MoSi2 layers: The dependence of composition on mixing temperature

Published:1989-09 Issue:1-4 Volume:38 Page:235-242
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Vályi Géza,Ryssel Heiner,Ganschow Otto,Jede Ralf

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures

2. Ion mixing and phase diagrams

3. Ion Implantation and Beam Processing;Davies,1984

4. Energy Pulse and Particle Beam Modification of Materials;Vályi,1988

5. Chemical and physical processes during the formation of MoSi2 by ion-beam mixing

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High current metal-ion implantation to fabricate metal silicides;Surface and Coatings Technology;2000-09

2. Metal silicides synthesized by high current metal–ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

3. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing;Journal of Electronic Materials;1995-10

4. Refractory metal silicides synthesized by metal vapor vacuum arc ion source implantation;Journal of Applied Physics;1995-04-15

5. Depth profiling of the C/Si interface;Canadian Journal of Physics;1993-11-01

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