Depth profiling of the C/Si interface
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Published:1993-11-01
Issue:11-12
Volume:71
Page:578-581
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ISSN:0008-4204
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Container-title:Canadian Journal of Physics
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language:en
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Short-container-title:Can. J. Phys.
Author:
Danailov D. M.,Miteva V.,Littmark U.
Abstract
Auger profiles analysis is performed on thin carbon films deposited on silicon substrates (a-C:D/Si) using a 5 keV Xe+-ion beam. Stability of the interface is observed after annealing at different temperatures. The profiling is modeled by means of a Monte-Carlo dynamic computer code. A comparison is made of the mixing of the layers for profiling with different primary ions: the heavy Xe+ and the commonly-used Ar+.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
1 articles.
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