Metal silicides synthesized by high current metal–ion implantation-Reference-Cited by-同舟云学术

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Metal silicides synthesized by high current metal–ion implantation

Published:1999 Issue:5 Volume:17 Page:2277
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Liu B. X.,Gao K. Y.,Zhu H. N.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and electrical characterization of platinum (~15at%) doped nickel silicides on Si(100) and SiGe/Si(100) substrates;Materials Science in Semiconductor Processing;2016-03

2. INTERESTING RESISTIVITY BEHAVIOR OF THE Ag–Ni–Si SILICIDE FILMS FORMED AT 850°C BY RAPID THERMAL ANNEALING OF THE Ag–Ni/Si FILMS;International Journal of Modern Physics B;2011-11-10

3. Thermal stability of intermediate band behavior in Ti implanted Si;Solar Energy Materials and Solar Cells;2010-11

4. Structural and electrical characterization of the nickel silicide films formed at 850°C by rapid thermal annealing of the Ni/Si(100) films;Applied Surface Science;2010-06

5. Preparation of NiSi2Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires;Applied Physics Express;2009-06-26

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