Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films-Reference-Cited by-同舟云学术

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Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films

Published:1989-09 Issue:1-4 Volume:38 Page:94-105
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Thomas O.,Molis S.,D'Heurle F.M.,Finstad T.J.,Gronberg L.,Suni I.,Svensson B.G.,Svensson J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. Observations on the hexagonal form of MoSi2and WSi2films produced by ion implantation and on related snowplow effects

2. Hexagonal WSi2in cosputtered (tungsten and silicon) mixture

3. Semiconducting Properties of Chromium Disilicide

4. Semiconducting properties of pure and Mn-doped chromium disilicides

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical Properties of Surface Silicides;Surface and Interface Science;2013-11-13

2. Growth and Optical Characterization of CrSi2 Thin Films;physica status solidi (b);1992-05-01

3. A review of some aspects of ternary metal‐metal‐Si and metal‐B‐Si systems;Journal of Applied Physics;1991-01-15

4. Oxidation and formation mechanisms in disilicides: VSi2and CrSi2, inert marker experiments and interpretation;Journal of Applied Physics;1990-12-15

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