Refractory and silicide gate metallisations for GaAs MESFET's
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference48 articles.
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3. C.J. Palmstrom and D.V. Morgan, in ref. [1], ch. 6, pp. 185–245.
4. Effect of alloying behavior on the electrical characteristics of n‐GaAs Schottky diodes metallized with W, Au, and Pt
5. Relative Thermal Stabilities of Thin-Film Contacts to n-GaAs Metallized with W, Au and Pt
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1. Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing;Japanese Journal of Applied Physics;2007-04-05
2. A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique;Japanese Journal of Applied Physics;1996-05-15
3. Rapid Thermal Processing of Contacts and Buffer Layers for Compound Semiconductor Device Technology;Advances in Rapid Thermal and Integrated Processing;1996
4. Characteristics of Ta and Ta‐Al alloy Schottky contacts ton‐GaAs;Journal of Applied Physics;1994-06
5. The thermal stability of tungsten silicide contacts to AlGaAs;Physica Status Solidi (a);1993-07-16
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