The thermal stability of tungsten silicide contacts to AlGaAs-Reference-Cited by-同舟云学术

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The thermal stability of tungsten silicide contacts to AlGaAs

Published:1993-07-16 Issue:1 Volume:138 Page:K17-K19
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Morgan D. V.,Thomas H.,McClatchie S.,Christou A.,Marazas B.,Diskett D. J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference2 articles.

1. Refractory and silicide gate metallisations for GaAs MESFET's

2. High temperature metallisation for GaAs device processing

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid Thermal Processing of Contacts and Buffer Layers for Compound Semiconductor Device Technology;Advances in Rapid Thermal and Integrated Processing;1996

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