Photoinduced transient reflectance investigation of process-induced near-surface defects in silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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2. Investigating subsurface damages in semiconductor-insulator-semiconductor solar cells with THz spectroscopy;physica status solidi (a);2016-12-30
3. Insitumeasurements of changes in the structure and in the excess charge‐carrier kinetics at the silicon surface during hydrogen and helium plasma exposure;Journal of Applied Physics;1995-08
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