Photothermal reflectance investigation of processed silicon. I. Room‐temperature study of the induced damage and of the annealing kinetics of defects in ion‐implanted wafers-Reference-Cited by-同舟云学术

Photothermal reflectance investigation of processed silicon. I. Room‐temperature study of the induced damage and of the annealing kinetics of defects in ion‐implanted wafers

Published:1990-03-15 Issue:6 Volume:67 Page:2815-2821
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Christofides Constantinos,Vitkin I. Alex,Mandelis Andreas

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.345449

Reference32 articles.

1. Ion implant monitoring with thermal wave technology

2. Spatially resolved defect mapping in semiconductors using laser‐modulated thermoreflectance

3. Photoacoustic measurements of ion‐implanted and laser‐annealed GaAs

4. High-frequency differential piezoelectric photoacoustic investigation of ion-implanted

5. Photothermal reflectance investigation of processed silicon. II. Signal generation and lattice temperature dependence in ion‐implanted and amorphous thin layers

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