High-frequency differential piezoelectric photoacoustic investigation of ion-implanted
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Acoustics and Ultrasonics,Instrumentation
Link
http://xplorestaging.ieee.org/ielx1/58/231/00004142.pdf?arnumber=4142
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoacoustic Signal Formation in Heterogeneous Multilayer Systems with Piezoelectric Detection;International Journal of Thermophysics;2014-07-04
2. Position modulated tangential photopyroelectric (PPE) spectrometry for low absorptions in liquids;Le Journal de Physique IV;1994-07
3. Annealing kinetics of defects of ion-implanted and furnace-annealed silicon layers: thermodynamic approach;Semiconductor Science and Technology;1992-11-01
4. Photothermal reflectance investigation of processed silicon. I. Room‐temperature study of the induced damage and of the annealing kinetics of defects in ion‐implanted wafers;Journal of Applied Physics;1990-03-15
5. Laser‐induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: A temperature study;Applied Physics Letters;1989-06-12
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