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CW CO2 laser CVD of amorphous hydrogenated silicon (a-Si:H): influence of the deposition geometry

  • Published:1992-01 Issue: Volume:54 Page:30-34
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Golusda E.,Lange R.,Lühmann K.-D.,Mollekopf G.,Wacker M.,Stafast H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

1. On the role of the substrate position in the CO2 laser CVD of amorphous hydrogenated silicon

2. Proc. 10th European Photovoltaics Solar Energy Conf. and Exhibit;Golusda,1991

3. E. Golusda, K.-D. Lühmann, G. Mollekopf, H. Stafast and M. Wacker, Ber. Bunsenges. Phys. Chem., to be published.

4. Laser‐induced chemical vapor deposition of hydrogenated amorphous silicon. I. Gas‐phase process model

5. Process characterization and mechanism for laser-induced chemical vapor deposition of a-Si : H from SiH4

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