Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells-Reference-Cited by-同舟云学术

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Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells

Published:1993-01 Issue:1-4 Volume:63 Page:172-176
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Baltagi Y.,Monéger S.,Tabata A.,Benyattou T.,Bru C.,Georgakilas A.,Zekentes K.,Halkias G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells

2. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

3. Ultimate low-loss single-mode fibre at 1.55 μm

4. Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition

5. Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence;Journal of Luminescence;2016-01

2. Band parameters for III–V compound semiconductors and their alloys;Journal of Applied Physics;2001-06

3. Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices;Materials Science and Engineering: R: Reports;1993-10

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