Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001)-Reference-Cited by-同舟云学术

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Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001)

Published:1994-12 Issue: Volume:82-83 Page:387-393
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sasaki M.,Abukawa T.,Yeom H.W.,Yamada M.,Suzuki S.,Sato S.,Kono S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface

2. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)

3. Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-xMBE Growth on Si(001) Substrates

4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

5. Layer-by-layer growth of germanium on Si(100): strain-induced morphology and the influence of surfactants

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1. Strain effects and intermixing at the Si surface: Importance of long-range elastic corrections in first-principles calculations;Physical Review B;2014-10-06

2. Atomic structure and composition of the2×Nreconstruction of the Ge wetting layer on Si(001) investigated by surface x-ray diffraction;Physical Review B;2011-05-17

3. Atomic H-mediated (Si14/Ge1)20 superlattice buffers for the growth of Si0.75Ge0.25 alloy layers with low residual strain;Thin Solid Films;2004-10

4. Reconstruction and intermixing in thin Ge layers on Si(001);Physical Review B;2003-08-26

5. Systematic theoretical investigations of miscibility in Si1−x−yGexCy thin films;Applied Surface Science;2003-06

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