High and low thermal nitridation of SiO2 thin films-Reference-Cited by-同舟云学术

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High and low thermal nitridation of SiO2 thin films

Published:1987-10 Issue:1-4 Volume:30 Page:216-223
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Balland B.,Bureau J.C.,Benamar A.,Ronda A.,Glachant A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Advantages of thermal nitride and nitroxide gate films in VLSI process

2. 3th Symp. on VLSI Science and Technology;Nozawa,1985

3. Kinetics of Si(100) nitridation first stages by ammonia: Electron- beam-induced thin film growth at room temperature

4. Improved surface nitridation of SiO2thin films in low ammonia pressures

5. High-temperature thermal nitridation and low-temperature electron-beam-enhanced nitridation of SiO2 thin films

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of thermal treatment on structures of Cu/atomic-layer-deposited TaN films/Si stacks;Thin Solid Films;2006-08

2. Chapter 1 Silica, silicon nitride and oxynitride thin films;New Insulators, Devices and Radiation Effects;1999

3. IR study of plasma-nitrided thermal SiO2 and pure silicon;Thin Solid Films;1993-02

4. Auger electron spectroscopy and low energy electron loss spectroscopy investigations of plasma- nitrided thin thermal SiO2 and native oxide on silicon;Thin Solid Films;1991-07

5. Low temperature plasma nitridation of thin thermal SiO2 and a silicon surface with native oxide;Microelectronics Journal;1990-01

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