High field phenomena in thin plasma nitrided SiO2 films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference7 articles.
1. Advantages of thermal nitride and nitroxide gate films in VLSI process
2. Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics
3. Effects of Ammonia Anneal on Electron Trappings in Silicon Dioxide
4. Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon
5. Improvement of thin-gate oxide integrity using through-silicon-gate nitrogen ion implantation
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1. One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma;Plasma Chemistry and Plasma Processing;2017-05-19
2. Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-01
3. Chapter 1 Silica, silicon nitride and oxynitride thin films;New Insulators, Devices and Radiation Effects;1999
4. Nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact;Applied Physics Letters;1997-10-06
5. Plasma nitridation of thin SiO2 films: AES, ELS and IR study;Journal of Nuclear Materials;1993-05
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