Capacitance-voltage characteristics of Schottky barrier diode in the presence of deep-level impurities and series resistance
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference10 articles.
1. Electronic states at silicide-silicon interfaces
2. Origin of the Excess Capacitance at Intimate Schottky Contacts
3. New technique for the determination of series resistance of Schottky barrier diodes
4. Effect of deep-level impurities on the open-circuit voltage of an MIS solar cell
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